I have identified a significant memory leak in O(N) geometry optimisation, though not the source. The system (which I will attach input files for when I have a better internet connection) is 4,096 atoms of silicon (8x8x8 fundamental cells) running on 64 processes (though this does not seem to matter) with a SZ basis and L range of 16 bohr. With the develop branch, at some point after the initial movement of atoms the memory use spikes (I've seen at least 16GB in one process) and even with 1.5TB of RAM the job fails. The same behaviour is not seen for v1.2.
I have identified a significant memory leak in O(N) geometry optimisation, though not the source. The system (which I will attach input files for when I have a better internet connection) is 4,096 atoms of silicon (8x8x8 fundamental cells) running on 64 processes (though this does not seem to matter) with a SZ basis and L range of 16 bohr. With the develop branch, at some point after the initial movement of atoms the memory use spikes (I've seen at least 16GB in one process) and even with 1.5TB of RAM the job fails. The same behaviour is not seen for v1.2.