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Tutorial for computing the edge emission of a multilayer stack using a 2D simulation #3128

@oskooi

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@oskooi

Edge-emitting semiconductor lasers are generally based on a multilayer stack where the wafer has been cleaved to expose an edge facet. It would be useful to provide a tutorial demonstration of the computation of the extraction efficiency and radiation pattern of such a structure. This would be based on a 2D cell in $xy$ and Brillouin-zone integration in $z$ (i.e. the out-of-plane direction). A schematic of the simulation setup is shown below. The active region forms the cavity and consists of an extended (spatially incoherent) source such as a quantum well.

There are three things to note regarding this calculation:

  1. A demonstration of Brillouin-zone integration for the case of a 1D cell is provided in Tutorial/Dipole Emission of a Light Emitting Diode as a Multilayer Stack. However, in this example, the radiation pattern is computed using a near-to-far field transformation (rather than directly from the DFT flux).
  2. The emission from the active region must be computed by combining the response from a collection of dipoles for which the emission is non zero. The dipole emission is expected to decrease with increasing distance from the edge facet.
  3. The radiation pattern $P(\theta, \phi)$ is computed for $\theta$ in [-π/2, π/2] (where $\theta$ = -π/2 is the $-y$ direction and $\theta$ = π/2 is $+y$) and $\phi$ in [0, π/2] (where $\phi$ = 0 is the $xy$ plane and $\phi$ = π/2 is the $yz$ plane).
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