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Edge-emitting semiconductor lasers are generally based on a multilayer stack where the wafer has been cleaved to expose an edge facet. It would be useful to provide a tutorial demonstration of the computation of the extraction efficiency and radiation pattern of such a structure. This would be based on a 2D cell in
There are three things to note regarding this calculation:
- A demonstration of Brillouin-zone integration for the case of a 1D cell is provided in Tutorial/Dipole Emission of a Light Emitting Diode as a Multilayer Stack. However, in this example, the radiation pattern is computed using a near-to-far field transformation (rather than directly from the DFT flux).
- The emission from the active region must be computed by combining the response from a collection of dipoles for which the emission is non zero. The dipole emission is expected to decrease with increasing distance from the edge facet.
- The radiation pattern
$P(\theta, \phi)$ is computed for$\theta$ in [-π/2, π/2] (where$\theta$ = -π/2 is the$-y$ direction and$\theta$ = π/2 is$+y$ ) and$\phi$ in [0, π/2] (where$\phi$ = 0 is the$xy$ plane and$\phi$ = π/2 is the$yz$ plane).
