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ALICE3-TRK: adjusted VD segmentation taking into account gaps between adjacent layers
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  • Detectors/Upgrades/ALICE3/TRK/base/include/TRKBase

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Detectors/Upgrades/ALICE3/TRK/base/include/TRKBase/Specs.h

Lines changed: 2 additions & 1 deletion
Original file line numberDiff line numberDiff line change
@@ -49,8 +49,9 @@ namespace layer
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constexpr double pitchX{10 * mu}; // pitch of the row
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constexpr double pitchZ{10 * mu}; // pitch of the column
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constexpr double totalThickness{silicon::thickness + metalstack::thickness}; // total thickness of the chip
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constexpr std::array<double, nLayers> gaps{1.63 * mm, 1.2 * mm, 1.2 * mm}; // gaps between two consecutive petals
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constexpr std::array<double, nLayers> radii{0.5 * cm, 1.2 * cm, 2.5 * cm}; // radius of layer in cm
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constexpr std::array<double, nLayers> width{radii[0] * 2 * M_PI / 4, radii[1] * 2 * M_PI / 4, radii[2] * 2 * M_PI / 4}; // width of the quarter of layer in cm
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constexpr std::array<double, nLayers> width{radii[0] * 2 * M_PI / 4 - gaps[0], radii[1] * 2 * M_PI / 4 - gaps[1], radii[2] * 2 * M_PI / 4 - gaps[2]}; // width of the quarter of layer in cm
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constexpr double length{50 * cm}; // length of the layer
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constexpr int nCols{static_cast<int>(length / pitchZ)}; // number of columns in the chip
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constexpr std::array<int, nLayers> nRows{static_cast<int>(width[0] / pitchX), static_cast<int>(width[1] / pitchX), static_cast<int>(width[2] / pitchX)}; // number of rows in the chip. For the moment is different for each layer since a siner segmentation in repetitive units is stil to be implemented

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